PART |
Description |
Maker |
SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
2SK3781-01R |
DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
NTD4865NT4G |
Power MOSFET 25V 10.2A 10.9 mOhm Single N-Channel DPAK 8.5 A, 25 V, 0.0109 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
IRF8852 |
25V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package
|
International Rectifier
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|
IRFH4210 |
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
|
International Rectifier
|
IRFH8201TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
|
International Rectifier
|
IPD09N03LA |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, D-PAK, RDSon = 8.6mOhm, 50A, LL
|
Infineon
|
IPF09N03LA |
OptiMOS 2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, Reverse D-PAK, RDSon = 8.9mOhm, 50A, LL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
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